Monocrystalline silicon carbide (SiC) is an important third-generation semiconductor material, widely used in high-frequency, high-voltage devices and other fields. Due to its high hardness and strong chemical inertness, the wafer processing process faces numerous challenges. This report analyzes the current status and application prospects of the SiC market, explores the impacts of surface metal impurity concentration, residual stress, and subsurface damage of SiC wafers on processing yield. It also briefly analyzes the grinding and polishing processes for large-size SiC wafers and puts forward several suggestions for the future development of SiC processing technology.

Professor Zhang Baoguo, Doctoral Supervisor. He obtained his Doctor of Engineering degree from the University of Nevada, Reno, USA in 2000. From 2000 to 2011, he worked in semiconductor high-tech companies in the United States, including AXT, Wafer World, SVTC, and Alta Devices. His research focuses on chemical mechanical polishing (CMP) and surface cleaning of semiconductor materials (Si, Ge, GaAs, InP, etc.), as well as chemical mechanical planarization (CMP) processes for integrated circuits (Cu, Ta, W, SiO2, etc.), serving as a Senior Engineer. From 2011 to 2013, he founded Wuxi Nax Semiconductor Materials Co., Ltd. in Jiangsu Province, serving as General Manager and concurrent Technical Director. In 2013, he joined the School of Electronics and Information Engineering, Hebei University of Technology, as a Distinguished Professor. He is a recipient of the Jiangsu Provincial Double Innovation Talent Program, Hebei Provincial Hundred Talents Program, and the Yan Zhao Friendship Award.